N-Channel MOSFET, 272 A, 100 V, 3-Pin D2PAK Texas Instruments CSD19536KTTT

RS Stock No.:: 900-9857
Mfr. Part No.:: CSD19536KTTT
Manufacturer:: Texas Instruments

N-Channel MOSFET, 272 A, 100 V, 3-Pin D2PAK Texas Instruments CSD19536KTTT

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MYR27.90

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Units	Per Unit
1 - 12	MYR27.90
13 - 24	MYR25.91
25 +	MYR25.63

RS Stock No.:: 900-9857
Mfr. Part No.:: CSD19536KTTT
Manufacturer:: Texas Instruments

ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	272 A
Maximum Drain Source Voltage	100 V
Package Type	D2PAK (TO-263)
Series	NexFET
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	2.8 mΩ
Channel Mode	Enhancement
Maximum Power Dissipation	375 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Transistor Material	Si
Typical Gate Charge @ Vgs	118 nC @ 0 V
Length	10.67mm
Maximum Operating Temperature	+175 °C
Width	9.65mm
Height	4.83mm
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.1V

N-Channel MOSFET, 272 A, 100 V, 3-Pin D2PAK Texas Instruments CSD19536KTTT

N-Channel NexFET™ Power MOSFET, Texas Instruments

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