P-Channel MOSFET, 30 A, 60 V, 3-Pin DPAK Infineon SPD30P06PGBTMA1
- RS Stock No.:
- 898-6864
- Mfr. Part No.:
- SPD30P06PGBTMA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 pack of 10 units)**
MYR70.02
80 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over MYR700.00
Units | Per Unit | Per Pack** |
---|---|---|
10 - 620 | MYR7.002 | MYR70.02 |
630 - 1240 | MYR6.691 | MYR66.91 |
1250 + | MYR6.555 | MYR65.55 |
**price indicative
- RS Stock No.:
- 898-6864
- Mfr. Part No.:
- SPD30P06PGBTMA1
- Manufacturer:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Manufacturer | Infineon | |
Channel Type | P | |
Maximum Continuous Drain Current | 30 A | |
Maximum Drain Source Voltage | 60 V | |
Series | SIPMOS® | |
Package Type | DPAK (TO-252) | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 75 mΩ | |
Channel Mode | Enhancement | |
Maximum Power Dissipation | 125 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Width | 6.22mm | |
Typical Gate Charge @ Vgs | 32 nC @ 10 V | |
Number of Elements per Chip | 1 | |
Maximum Operating Temperature | +175 °C | |
Length | 6.73mm | |
Transistor Material | Si | |
Height | 2.41mm | |
Forward Diode Voltage | 1.7V | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Manufacturer Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 30 A | ||
Maximum Drain Source Voltage 60 V | ||
Series SIPMOS® | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 75 mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation 125 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 6.22mm | ||
Typical Gate Charge @ Vgs 32 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Length 6.73mm | ||
Transistor Material Si | ||
Height 2.41mm | ||
Forward Diode Voltage 1.7V | ||
Minimum Operating Temperature -55 °C | ||
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