N-Channel MOSFET, 13 A, 700 V, 3-Pin TO-247 Infineon IPW65R190C7XKSA1
- RS Stock No.:
- 897-7630
- Mfr. Part No.:
- IPW65R190C7XKSA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 pack of 3 units)**
MYR51.78
114 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over MYR700.00
Units | Per Unit | Per Pack** |
---|---|---|
3 - 6 | MYR17.26 | MYR51.78 |
9 - 12 | MYR15.54 | MYR46.62 |
15 + | MYR14.673 | MYR44.019 |
**price indicative
- RS Stock No.:
- 897-7630
- Mfr. Part No.:
- IPW65R190C7XKSA1
- Manufacturer:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Manufacturer | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 13 A | |
Maximum Drain Source Voltage | 700 V | |
Series | CoolMOS™ C7 | |
Package Type | TO-247 | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 190 mΩ | |
Channel Mode | Enhancement | |
Maximum Power Dissipation | 72 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -30 V, +30 V | |
Number of Elements per Chip | 1 | |
Maximum Operating Temperature | +150 °C | |
Length | 16.13mm | |
Typical Gate Charge @ Vgs | 23 nC @ 10 V | |
Width | 21.1mm | |
Transistor Material | Si | |
Minimum Operating Temperature | -55 °C | |
Height | 5.21mm | |
Forward Diode Voltage | 0.9V | |
Select all | ||
---|---|---|
Manufacturer Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 13 A | ||
Maximum Drain Source Voltage 700 V | ||
Series CoolMOS™ C7 | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 190 mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation 72 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Length 16.13mm | ||
Typical Gate Charge @ Vgs 23 nC @ 10 V | ||
Width 21.1mm | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 5.21mm | ||
Forward Diode Voltage 0.9V | ||
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