Infineon OptiMOS™ 2 N-Channel MOSFET, 2.5 A, 20 V, 3-Pin SOT-23 BSS205NH6327XTSA1 | RS

Infineon OptiMOS™ 2 N-Channel MOSFET, 2.5 A, 20 V, 3-Pin SOT-23 BSS205NH6327XTSA1

RS Stock No.:: 892-2374
Mfr. Part No.:: BSS205NH6327XTSA1
Manufacturer:: Infineon

Infineon OptiMOS™ 2 N-Channel MOSFET, 2.5 A, 20 V, 3-Pin SOT-23 BSS205NH6327XTSA1

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Units	Per Unit	Per Pack**
100 - 700	MYR0.73	MYR73.00
800 - 1400	MYR0.639	MYR63.90
1500 +	MYR0.592	MYR59.20

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RS Stock No.:: 892-2374
Mfr. Part No.:: BSS205NH6327XTSA1
Manufacturer:: Infineon

Infineon OptiMOS™2 Power MOSFET Family

Infineon’s OptiMOS™2 N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.

Infineon OptiMOS™ 2 Series MOSFET, 2.5A Maximum Continuous Drain Current, 500 mW Maximum Power Dissipation - BSS205NH6327XTSA1

This N-channel MOSFET is a vital component in contemporary electronic applications, especially in automation and automotive sectors. Designed for efficient switching applications, it features a compact SOT-23 surface mount package. Its capacity to handle significant drain currents and voltages makes it suitable for industrial and automotive contexts, ensuring consistent performance.

Features & Benefits

• Maximum continuous drain current of 2.5A
• Maximum drain-source voltage of 20V
• Minimal Rds(on) of 85 mΩ enhances power efficiency
• Qualified to AEC-Q101 for automotive applications

Applications

• Used in automotive power management systems
• Suitable for DC-DC converters in electronic devices
• Employed in motor control for efficient switching
• Ideal for power amplification in RF

What kind of protection does this offer against voltage spikes?

It is avalanche rated and can handle high energy pulses, providing protection in dynamic environments.

What is the significance of the low Rds(on) in this device?

A low on-state resistance improves power loss management and enhances efficiency, making it suitable for high-efficiency applications.

How can this be installed on a circuit board?

It can be soldered onto a PCB in the SOT-23 package, ensuring secure mounting for surface-mount technology applications.

What are the typical switching characteristics at the rated voltage?

The device displays quick turn-on and turn-off times, improving switching efficiency in high-speed applications.

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	2.5 A
	Maximum Drain Source Voltage	20 V
	Series	OptiMOS™ 2
	Package Type	SOT-23
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	85 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	1.2V
	Minimum Gate Threshold Voltage	0.7V
	Maximum Power Dissipation	500 mW
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-12 V, +12 V
	Number of Elements per Chip	1
	Length	2.9mm
	Typical Gate Charge @ Vgs	2.1 nC @ 4.5 V
	Maximum Operating Temperature	+150 °C
	Width	0.1mm
	Transistor Material	Si
	Minimum Operating Temperature	-55 °C
	Height	1.3mm
	Automotive Standard	AEC-Q101
	Forward Diode Voltage	1.1V

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 2.5 A
	Maximum Drain Source Voltage 20 V
	Series OptiMOS™ 2
	Package Type SOT-23
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 85 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 1.2V
	Minimum Gate Threshold Voltage 0.7V
	Maximum Power Dissipation 500 mW
	Transistor Configuration Single
	Maximum Gate Source Voltage -12 V, +12 V
	Number of Elements per Chip 1
	Length 2.9mm
	Typical Gate Charge @ Vgs 2.1 nC @ 4.5 V
	Maximum Operating Temperature +150 °C
	Width 0.1mm
	Transistor Material Si
	Minimum Operating Temperature -55 °C
	Height 1.3mm
	Automotive Standard AEC-Q101
	Forward Diode Voltage 1.1V