N-Channel MOSFET, 43 A, 100 V, 3-Pin TO-220 Infineon IPP180N10N3GXKSA1
- RS Stock No.:
- 892-2318
- Mfr. Part No.:
- IPP180N10N3GXKSA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 pack of 10 units)**
MYR53.38
490 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over MYR700.00
Units | Per Unit | Per Pack** |
|---|---|---|
| 10 - 10 | MYR5.338 | MYR53.38 |
| 20 - 20 | MYR4.853 | MYR48.53 |
| 30 + | MYR4.601 | MYR46.01 |
**price indicative
- RS Stock No.:
- 892-2318
- Mfr. Part No.:
- IPP180N10N3GXKSA1
- Manufacturer:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 43 A | |
| Maximum Drain Source Voltage | 100 V | |
| Series | OptiMOS™ 3 | |
| Package Type | TO-220 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 33 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.5V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 71 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 19 nC @ 10 V | |
| Length | 10.36mm | |
| Maximum Operating Temperature | +175 °C | |
| Width | 4.57mm | |
| Transistor Material | Si | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 15.95mm | |
Select all | ||
|---|---|---|
Manufacturer Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 43 A | ||
Maximum Drain Source Voltage 100 V | ||
Series OptiMOS™ 3 | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 33 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 71 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 19 nC @ 10 V | ||
Length 10.36mm | ||
Maximum Operating Temperature +175 °C | ||
Width 4.57mm | ||
Transistor Material Si | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
Height 15.95mm | ||
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