IXYS GigaMOS, HiperFET Type N-Channel MOSFET, 550 A, 55 V Enhancement, 24-Pin SMPD

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Subtotal 5 units (supplied in a tube)*

MYR994.55

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Units
Per Unit
5 - 9MYR198.91
10 +MYR174.44

*price indicative

Packaging Options:
RS Stock No.:
875-2500P
Mfr. Part No.:
MMIX1T550N055T2
Manufacturer:
IXYS
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Brand

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

550A

Maximum Drain Source Voltage Vds

55V

Package Type

SMPD

Series

GigaMOS, HiperFET

Mount Type

Surface

Pin Count

24

Maximum Drain Source Resistance Rds

1.3mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

830W

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

595nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

25.25mm

Height

5.7mm

Automotive Standard

No

N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series


MOSFET Transistors, IXYS


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