Texas Instruments Single NexFET 1 Type N, Type N-Channel MOSFET, 259 A, 100 V Enhancement, 3-Pin TO-220 CSD19536KCS

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Subtotal 14 units (supplied in a tube)*

MYR275.59

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Units
Per Unit
14 - 24MYR19.685
26 +MYR18.70

*price indicative

Packaging Options:
RS Stock No.:
827-4919P
Mfr. Part No.:
CSD19536KCS
Manufacturer:
Texas Instruments
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Brand

Texas Instruments

Product Type

MOSFET

Channel Type

Type N, Type N

Maximum Continuous Drain Current Id

259A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-220

Series

NexFET

Mount Type

Through Hole, Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

3.2mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

375W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

118nC

Forward Voltage Vf

-5V

Transistor Configuration

Single

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

10.67mm

Height

16.51mm

Width

4.7 mm

Number of Elements per Chip

1

Automotive Standard

No

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