Dual P-Channel MOSFET, 135 mA, 60 V, 6-Pin SC-89-6 Vishay SI1025X-T1-GE3

RS Stock No.:: 812-3029
Mfr. Part No.:: SI1025X-T1-GE3
Manufacturer:: Vishay

Dual P-Channel MOSFET, 135 mA, 60 V, 6-Pin SC-89-6 Vishay SI1025X-T1-GE3

This image is representative of the product range

Bulk discount available

Price Each (On a Tape of 20)

MYR2.043

Temporarily out of stock - back order for despatch 04/01/2025, delivery within 4 working days from despatch date*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per Unit	Per Tape**
20 - 740	MYR2.043	MYR40.86
760 - 1480	MYR1.783	MYR35.66
1500 +	MYR1.646	MYR32.92

**price indicative

RS Stock No.:: 812-3029
Mfr. Part No.:: SI1025X-T1-GE3
Manufacturer:: Vishay

Si1025X, P-Channel 60V (D-S) MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	135 mA
Maximum Drain Source Voltage	60 V
Package Type	SC-89-6
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	8 Ω
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	250 mW
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Width	1.2mm
Typical Gate Charge @ Vgs	1.7 nC @ 15 V
Length	1.7mm
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	2
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	0.6mm

Dual P-Channel MOSFET, 135 mA, 60 V, 6-Pin SC-89-6 Vishay SI1025X-T1-GE3

Dual P-Channel MOSFET, Vishay Semiconductor

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