N-Channel MOSFET, 80 A, 60 V, 3-Pin D2PAK onsemi FDB050AN06A0
- RS Stock No.:
- 809-0809
- Mfr. Part No.:
- FDB050AN06A0
- Manufacturer:
- onsemi
Bulk discount available
Subtotal (1 pack of 2 units)**
MYR25.84
664 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over MYR700.00
Units | Per Unit | Per Pack** |
|---|---|---|
| 2 - 198 | MYR12.92 | MYR25.84 |
| 200 - 398 | MYR10.61 | MYR21.22 |
| 400 + | MYR10.39 | MYR20.78 |
**price indicative
- RS Stock No.:
- 809-0809
- Mfr. Part No.:
- FDB050AN06A0
- Manufacturer:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 80 A | |
| Maximum Drain Source Voltage | 60 V | |
| Series | PowerTrench | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 11 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 245 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +175 °C | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Width | 9.65mm | |
| Typical Gate Charge @ Vgs | 61 nC @ 10 V | |
| Length | 10.67mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 4.83mm | |
Select all | ||
|---|---|---|
Manufacturer onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 80 A | ||
Maximum Drain Source Voltage 60 V | ||
Series PowerTrench | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 11 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 245 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Width 9.65mm | ||
Typical Gate Charge @ Vgs 61 nC @ 10 V | ||
Length 10.67mm | ||
Minimum Operating Temperature -55 °C | ||
Height 4.83mm | ||
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