N-Channel MOSFET, 4.5 A, 650 V, 3-Pin DPAK STMicroelectronics STD6N60M2
- RS Stock No.:
- 786-3615
- Mfr. Part No.:
- STD6N60M2
- Manufacturer:
- STMicroelectronics
Bulk discount available
Subtotal (1 pack of 5 units)**
MYR35.90
Temporarily out of stock - back order for despatch 10/08/2025, delivery within 4 working days from despatch date*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over MYR700.00
Units | Per Unit | Per Pack** |
|---|---|---|
| 5 - 620 | MYR7.18 | MYR35.90 |
| 625 - 1245 | MYR6.95 | MYR34.75 |
| 1250 + | MYR6.908 | MYR34.54 |
**price indicative
- RS Stock No.:
- 786-3615
- Mfr. Part No.:
- STD6N60M2
- Manufacturer:
- STMicroelectronics
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 4.5 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | DPAK (TO-252) | |
| Series | MDmesh M2 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 1.2 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 60 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -25 V, +25 V | |
| Typical Gate Charge @ Vgs | 8 nC @ 10 V | |
| Length | 6.6mm | |
| Maximum Operating Temperature | +150 °C | |
| Width | 6.2mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Height | 2.4mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Manufacturer STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 4.5 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type DPAK (TO-252) | ||
Series MDmesh M2 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 1.2 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 60 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Typical Gate Charge @ Vgs 8 nC @ 10 V | ||
Length 6.6mm | ||
Maximum Operating Temperature +150 °C | ||
Width 6.2mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Height 2.4mm | ||
Minimum Operating Temperature -55 °C | ||
Related links
- N-Channel MOSFET 650 V, 3-Pin DPAK STMicroelectronics STD6N60M2
- N-Channel MOSFET 650 V, 3-Pin DPAK STMicroelectronics STD16N65M5
- N-Channel MOSFET 650 V, 3-Pin DPAK STMicroelectronics STD13N65M2
- N-Channel MOSFET 650 V, 3-Pin DPAK STMicroelectronics STD9N60M2
- N-Channel MOSFET 800 V, 3-Pin DPAK Infineon IPD80R1K2P7ATMA1
- N-Channel MOSFET 1000 V, 3-Pin DPAK STMicroelectronics STD2NK100Z
- N-Channel MOSFET 250 V, 3-Pin DPAK STMicroelectronics STD17NF25
- N-Channel MOSFET 600 V, 3-Pin DPAK STMicroelectronics STD2HNK60Z