Renesas Dual N/P-Channel-Channel MOSFET, 1.4 A, 20 V, 6-Pin SOT-363 UPA679TB-T1-A

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Subtotal 80 units (supplied on a continuous strip)*

MYR56.88

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Per Unit
80 - 160MYR0.711
200 - 360MYR0.701
400 - 760MYR0.69
800 +MYR0.681

*price indicative

Packaging Options:
RS Stock No.:
772-6642P
Mfr. Part No.:
UPA679TB-T1-A
Manufacturer:
Renesas Electronics
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Brand

Renesas Electronics

Channel Type

N, P

Maximum Continuous Drain Current

1.4 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-363 (SC-88)

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

880 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

200 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-12 V, +12 V

Width

1.25mm

Maximum Operating Temperature

+150 °C

Length

2mm

Number of Elements per Chip

2

Transistor Material

Si

Height

0.9mm

COO (Country of Origin):
JP

N/P-Channel Dual MOSFET, Renesas Electronics



MOSFET Transistors, Renesas Electronics (NEC)