Renesas P-Channel MOSFET, 6 A, 60 V, 3-Pin SOT-346T 2SJ626-T1B-A
- RS Stock No.:
- 772-5276P
- Mfr. Part No.:
- 2SJ626-T1B-A
- Manufacturer:
- Renesas Electronics
This image is representative of the product range
Bulk discount available
Subtotal 40 units (supplied on a continuous strip)*
MYR41.12
FREE delivery for orders over RM 500.00
Stock information currently inaccessible
Units | Per Unit |
|---|---|
| 40 - 80 | MYR1.028 |
| 100 - 180 | MYR1.006 |
| 200 - 380 | MYR0.984 |
| 400 + | MYR0.965 |
*price indicative
- RS Stock No.:
- 772-5276P
- Mfr. Part No.:
- 2SJ626-T1B-A
- Manufacturer:
- Renesas Electronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Renesas Electronics | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 6 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | SOT-346T (SC-96) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 550 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Maximum Power Dissipation | 1.25 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 1.5mm | |
| Number of Elements per Chip | 1 | |
| Length | 2.9mm | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 8.2 nC @ 10 V | |
| Height | 1mm | |
| Select all | ||
|---|---|---|
Brand Renesas Electronics | ||
Channel Type P | ||
Maximum Continuous Drain Current 6 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type SOT-346T (SC-96) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 550 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 1.25 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 1.5mm | ||
Number of Elements per Chip 1 | ||
Length 2.9mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 8.2 nC @ 10 V | ||
Height 1mm | ||
P-Channel MOSFET, Renesas Electronics (NEC)
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