P-Channel MOSFET, 55 A, 35 V, 3-Pin DPAK onsemi FDD6637
- RS Stock No.:
- 759-9093
- Mfr. Part No.:
- FDD6637
- Manufacturer:
- onsemi
Bulk discount available
Subtotal (1 pack of 5 units)**
MYR39.62
3215 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over MYR700.00
Units | Per Unit | Per Pack** |
---|---|---|
5 - 620 | MYR7.924 | MYR39.62 |
625 - 1245 | MYR7.758 | MYR38.79 |
1250 + | MYR7.526 | MYR37.63 |
**price indicative
- RS Stock No.:
- 759-9093
- Mfr. Part No.:
- FDD6637
- Manufacturer:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Manufacturer | onsemi | |
Channel Type | P | |
Maximum Continuous Drain Current | 55 A | |
Maximum Drain Source Voltage | 35 V | |
Series | PowerTrench | |
Package Type | DPAK (TO-252) | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 19 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 57 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -25 V, +25 V | |
Width | 6.22mm | |
Maximum Operating Temperature | +150 °C | |
Number of Elements per Chip | 1 | |
Typical Gate Charge @ Vgs | 45 nC @ 10 V | |
Transistor Material | Si | |
Length | 6.73mm | |
Height | 2.39mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Manufacturer onsemi | ||
Channel Type P | ||
Maximum Continuous Drain Current 55 A | ||
Maximum Drain Source Voltage 35 V | ||
Series PowerTrench | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 19 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 57 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Width 6.22mm | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 45 nC @ 10 V | ||
Transistor Material Si | ||
Length 6.73mm | ||
Height 2.39mm | ||
Minimum Operating Temperature -55 °C | ||
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