N-Channel MOSFET, 88 A, 200 V, 3-Pin D2PAK Infineon IPB107N20N3GATMA1

RS Stock No.:: 754-5434
Mfr. Part No.:: IPB107N20N3GATMA1
Manufacturer:: Infineon

N-Channel MOSFET, 88 A, 200 V, 3-Pin D2PAK Infineon IPB107N20N3GATMA1

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Price Each

MYR39.28

811 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*

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Units	Per Unit
1 - 249	MYR39.28
250 - 499	MYR38.46
500 +	MYR37.31

RS Stock No.:: 754-5434
Mfr. Part No.:: IPB107N20N3GATMA1
Manufacturer:: Infineon

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	88 A
Maximum Drain Source Voltage	200 V
Package Type	D2PAK (TO-263)
Series	OptiMOS™
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	11 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	300 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	65 nC @ 10 V
Number of Elements per Chip	1
Transistor Material	Si
Length	10.31mm
Width	9.45mm
Maximum Operating Temperature	+175 °C
Minimum Operating Temperature	-55 °C
Height	4.57mm

N-Channel MOSFET, 88 A, 200 V, 3-Pin D2PAK Infineon IPB107N20N3GATMA1

Infineon OptiMOS™3 Power MOSFETs, 100V and over