N-Channel MOSFET, 100 A, 60 V, 8-Pin TDSON Infineon BSC028N06LS3GATMA1
- RS Stock No.:
- 754-5241
- Mfr. Part No.:
- BSC028N06LS3GATMA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)**
MYR22.56
Stock check temporarily unavailable - call for stock availability
FREE delivery for orders over MYR700.00
Units | Per Unit | Per Pack** |
---|---|---|
2 - 1248 | MYR11.28 | MYR22.56 |
1250 - 2498 | MYR9.415 | MYR18.83 |
2500 + | MYR9.185 | MYR18.37 |
**price indicative
- RS Stock No.:
- 754-5241
- Mfr. Part No.:
- BSC028N06LS3GATMA1
- Manufacturer:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Manufacturer | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 100 A | |
Maximum Drain Source Voltage | 60 V | |
Package Type | TDSON | |
Series | OptiMOS™ 3 | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 4.8 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 2.2V | |
Minimum Gate Threshold Voltage | 1.2V | |
Maximum Power Dissipation | 139 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Width | 6.1mm | |
Maximum Operating Temperature | +150 °C | |
Number of Elements per Chip | 1 | |
Typical Gate Charge @ Vgs | 132 nC @ 10 V | |
Transistor Material | Si | |
Length | 5.35mm | |
Height | 1.1mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Manufacturer Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 100 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type TDSON | ||
Series OptiMOS™ 3 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 4.8 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.2V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 139 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 6.1mm | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 132 nC @ 10 V | ||
Transistor Material Si | ||
Length 5.35mm | ||
Height 1.1mm | ||
Minimum Operating Temperature -55 °C | ||
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