Infineon SIPMOS N-Channel MOSFET, 90 mA, 600 V, 3-Pin SOT-89 BSS225H6327FTSA1
- RS Stock No.:
- 752-8246
- Mfr. Part No.:
- BSS225H6327FTSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
MYR19.80
FREE delivery for orders over RM 500.00
Last RS stock
- Final 20 unit(s), ready to ship from another location
Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 10 | MYR1.98 | MYR19.80 |
| 20 - 90 | MYR1.963 | MYR19.63 |
| 100 - 190 | MYR1.923 | MYR19.23 |
| 200 - 390 | MYR1.883 | MYR18.83 |
| 400 + | MYR1.842 | MYR18.42 |
*price indicative
- RS Stock No.:
- 752-8246
- Mfr. Part No.:
- BSS225H6327FTSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 90 mA | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | SOT-89 | |
| Series | SIPMOS | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 45 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.3V | |
| Minimum Gate Threshold Voltage | 1.3V | |
| Maximum Power Dissipation | 1 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 4.5mm | |
| Transistor Material | Si | |
| Width | 2.5mm | |
| Typical Gate Charge @ Vgs | 3.9 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.5mm | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 90 mA | ||
Maximum Drain Source Voltage 600 V | ||
Package Type SOT-89 | ||
Series SIPMOS | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 45 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.3V | ||
Minimum Gate Threshold Voltage 1.3V | ||
Maximum Power Dissipation 1 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 4.5mm | ||
Transistor Material Si | ||
Width 2.5mm | ||
Typical Gate Charge @ Vgs 3.9 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 1.5mm | ||
Infineon SIPMOS® N-Channel MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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