N-Channel MOSFET, 1.9 A, 100 V, 3-Pin SOT-23 Nexperia PMV213SN,215
- RS Stock No.:
- 725-8326
- Mfr. Part No.:
- PMV213SN,215
- Manufacturer:
- Nexperia
Bulk discount available
Subtotal (1 pack of 20 units)**
MYR34.48
600 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over MYR700.00
Units | Per Unit | Per Pack** |
|---|---|---|
| 20 - 740 | MYR1.724 | MYR34.48 |
| 760 - 1480 | MYR1.724 | MYR34.48 |
| 1500 + | MYR1.514 | MYR30.28 |
**price indicative
- RS Stock No.:
- 725-8326
- Mfr. Part No.:
- PMV213SN,215
- Manufacturer:
- Nexperia
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | Nexperia | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 1.9 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | SOT-23 (TO-236AB) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 250 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 2 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 3mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 7 nC @ 10 V | |
| Width | 1.4mm | |
| Transistor Material | Si | |
| Height | 1mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Manufacturer Nexperia | ||
Channel Type N | ||
Maximum Continuous Drain Current 1.9 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type SOT-23 (TO-236AB) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 250 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 2 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Maximum Operating Temperature +150 °C | ||
Length 3mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 7 nC @ 10 V | ||
Width 1.4mm | ||
Transistor Material Si | ||
Height 1mm | ||
Minimum Operating Temperature -55 °C | ||