Vishay Si7850DP Type N-Channel MOSFET, 6.2 A, 60 V Enhancement, 8-Pin SO-8 SI7850DP-T1-E3

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Subtotal (1 pack of 5 units)*

MYR30.13

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Units
Per Unit
Per Pack*
5 - 745MYR6.026MYR30.13
750 - 1495MYR5.30MYR26.50
1500 +MYR4.696MYR23.48

*price indicative

Packaging Options:
RS Stock No.:
710-4764
Mfr. Part No.:
SI7850DP-T1-E3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

6.2A

Maximum Drain Source Voltage Vds

60V

Series

Si7850DP

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

22mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

1.8W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

18nC

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

1.04mm

Length

4.9mm

Width

5.89 mm

Standards/Approvals

No

Automotive Standard

No

N-Channel MOSFET, 60V to 90V, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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