P-Channel MOSFET, 11 A, 30 V, 8-Pin SOIC onsemi FDS6675BZ
- RS Stock No.:
- 671-0598
- Mfr. Part No.:
- FDS6675BZ
- Manufacturer:
- onsemi
Bulk discount available
Subtotal (1 pack of 5 units)**
MYR20.88
35 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over MYR700.00
Units | Per Unit | Per Pack** |
---|---|---|
5 - 45 | MYR4.176 | MYR20.88 |
50 + | MYR4.052 | MYR20.26 |
**price indicative
- RS Stock No.:
- 671-0598
- Mfr. Part No.:
- FDS6675BZ
- Manufacturer:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Manufacturer | onsemi | |
Channel Type | P | |
Maximum Continuous Drain Current | 11 A | |
Maximum Drain Source Voltage | 30 V | |
Series | PowerTrench | |
Package Type | SOIC | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 13 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 2.5 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -25 V, +25 V | |
Length | 5mm | |
Maximum Operating Temperature | +150 °C | |
Number of Elements per Chip | 1 | |
Width | 4mm | |
Typical Gate Charge @ Vgs | 44 nC @ 10 V | |
Transistor Material | Si | |
Height | 1.5mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Manufacturer onsemi | ||
Channel Type P | ||
Maximum Continuous Drain Current 11 A | ||
Maximum Drain Source Voltage 30 V | ||
Series PowerTrench | ||
Package Type SOIC | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 13 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 2.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Length 5mm | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Width 4mm | ||
Typical Gate Charge @ Vgs 44 nC @ 10 V | ||
Transistor Material Si | ||
Height 1.5mm | ||
Minimum Operating Temperature -55 °C | ||
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