N-Channel MOSFET, 36 A, 100 V, 3-Pin TO-220AB Infineon IRL540NPBF

RS Stock No.:: 541-1219
Distrelec Article No.:: 303-41-393
Mfr. Part No.:: IRL540NPBF
Manufacturer:: Infineon

N-Channel MOSFET, 36 A, 100 V, 3-Pin TO-220AB Infineon IRL540NPBF

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MYR7.10

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RS Stock No.:: 541-1219
Distrelec Article No.:: 303-41-393
Mfr. Part No.:: IRL540NPBF
Manufacturer:: Infineon

N-Channel Power MOSFET 100V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 36A Maximum Continuous Drain Current, 140W Maximum Power Dissipation - IRL540NPBF

This MOSFET is an essential component for high-performance circuits, designed to effectively handle high current and voltage applications. It operates with a maximum drain-source voltage of 100V, making it suitable for rigorous environments in automation and electronic systems. Its strong performance and dependable operation enhance efficiency across various electrical systems.

Features & Benefits

• Continuous drain current capability of 36A for demanding applications
• Low Rds(on) of 44mΩ minimises power losses during operation
• Enhancement mode design improves switching characteristics for efficiency
• Power dissipation rating of up to 140W accommodates high-performance scenarios
• Operating temperature range from -55°C to +175°C allows versatility
• Through hole mounting facilitates easy integration into existing systems

Applications

• Power management in industrial automation systems
• Electric motor control in robotics
• DC-DC converters in renewable energy systems
• Power supplies requiring efficient switching functionality
• Consumer electronics for effective power distribution

What are the maximum voltage and current ratings?

The maximum drain-source voltage is 100V, with a continuous drain current of 36A.

How does the low Rds(on) improve performance?

A low Rds(on) of 44mΩ results in minimal power dissipation, enhancing efficiency and reducing thermal load.

What is the significance of the enhancement mode?

This mode allows for improved control over operation, enabling efficient switching and application versatility.

Can it be used in high-temperature environments?

Yes, it operates effectively at temperatures from -55°C to +175°C, suitable for extreme conditions.

How should it be mounted for optimal performance?

It is designed for through hole mounting, ensuring secure installation and connectivity in circuits.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Manufacturer	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	36 A
	Maximum Drain Source Voltage	100 V
	Series	HEXFET
	Package Type	TO-220AB
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	44 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2V
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	140 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-16 V, +16 V
	Length	10.54mm
	Number of Elements per Chip	1
	Transistor Material	Si
	Typical Gate Charge @ Vgs	74 nC @ 5 V
	Width	4.69mm
	Maximum Operating Temperature	+175 °C
	Minimum Operating Temperature	-55 °C
	Height	8.77mm
	Forward Diode Voltage	1.3V

	Select all
	Manufacturer Infineon
	Channel Type N
	Maximum Continuous Drain Current 36 A
	Maximum Drain Source Voltage 100 V
	Series HEXFET
	Package Type TO-220AB
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 44 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2V
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 140 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -16 V, +16 V
	Length 10.54mm
	Number of Elements per Chip 1
	Transistor Material Si
	Typical Gate Charge @ Vgs 74 nC @ 5 V
	Width 4.69mm
	Maximum Operating Temperature +175 °C
	Minimum Operating Temperature -55 °C
	Height 8.77mm
	Forward Diode Voltage 1.3V