Vishay SIRS Type P-Channel MOSFET, 198 A, 40 V Enhancement, 8-Pin SO-8 SIRS4401DP-T1-GE3

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Subtotal (1 pack of 2 units)*

MYR32.70

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Units
Per Unit
Per Pack*
2 - 48MYR16.35MYR32.70
50 - 98MYR16.025MYR32.05
100 - 248MYR14.66MYR29.32
250 - 998MYR14.395MYR28.79
1000 +MYR14.135MYR28.27

*price indicative

Packaging Options:
RS Stock No.:
279-9967
Mfr. Part No.:
SIRS4401DP-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

198A

Maximum Drain Source Voltage Vds

40V

Series

SIRS

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0022Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

588nC

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

132W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

5mm

Automotive Standard

No

The Vishay MOSFET is a P-Channel MOSFET and the transistor in it is made up of material known as silicon.

New generation power MOSFET

100 percent Rg and UIS tested

Ultra low RDS x Qg FOM product

Fully lead (Pb)-free device

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