Vishay SiR Type P-Channel MOSFET, 105 A, 20 V Enhancement, 8-Pin SO-8 SIR5211DP-T1-GE3

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Subtotal (1 pack of 5 units)*

MYR24.06

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  • 5,945 unit(s) ready to ship from another location
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Units
Per Unit
Per Pack*
5 - 45MYR4.812MYR24.06
50 - 95MYR3.61MYR18.05
100 - 245MYR3.202MYR16.01
250 - 995MYR3.144MYR15.72
1000 +MYR3.086MYR15.43

*price indicative

Packaging Options:
RS Stock No.:
279-9949
Mfr. Part No.:
SIR5211DP-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

105A

Maximum Drain Source Voltage Vds

20V

Package Type

SO-8

Series

SiR

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0062Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±20 V

Typical Gate Charge Qg @ Vgs

158nC

Maximum Power Dissipation Pd

56.8W

Maximum Operating Temperature

150°C

Length

5.15mm

Standards/Approvals

RoHS

Automotive Standard

No

The Vishay MOSFET is a P-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

100 percent Rg and UIS tested

Fully lead (Pb)-free device

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