Vishay SiR Type N-Channel MOSFET, 55.9 A, 100 V Enhancement, 8-Pin SO-8 SIR5108DP-T1-RE3

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Subtotal (1 pack of 5 units)*

MYR40.77

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Units
Per Unit
Per Pack*
5 - 45MYR8.154MYR40.77
50 - 95MYR7.81MYR39.05
100 - 245MYR6.944MYR34.72
250 - 995MYR6.804MYR34.02
1000 +MYR6.67MYR33.35

*price indicative

Packaging Options:
RS Stock No.:
279-9942
Mfr. Part No.:
SIR5108DP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

55.9A

Maximum Drain Source Voltage Vds

100V

Series

SiR

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0105Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

65.7W

Typical Gate Charge Qg @ Vgs

23nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

5.15mm

Standards/Approvals

RoHS

Automotive Standard

No

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

Fully lead (Pb)-free device

Very low RDS x Qg figure of merit

100 percent Rg and UIS tested

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