Vishay SIJ Type N-Channel MOSFET, 59 A, 100 V Enhancement, 7-Pin SO-8L SIJ4106DP-T1-GE3
- RS Stock No.:
- 279-9931
- Mfr. Part No.:
- SIJ4106DP-T1-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 4 units)*
MYR38.86
FREE delivery for orders over RM 500.00
In Stock
- Plus 6,000 unit(s) shipping from 02 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 4 - 56 | MYR9.715 | MYR38.86 |
| 60 - 96 | MYR7.278 | MYR29.11 |
| 100 - 236 | MYR6.48 | MYR25.92 |
| 240 - 996 | MYR6.363 | MYR25.45 |
| 1000 + | MYR6.245 | MYR24.98 |
*price indicative
- RS Stock No.:
- 279-9931
- Mfr. Part No.:
- SIJ4106DP-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 59A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SO-8L | |
| Series | SIJ | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 0.0083Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 48nC | |
| Maximum Power Dissipation Pd | 69.4W | |
| Maximum Operating Temperature | 150°C | |
| Length | 5.13mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 59A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SO-8L | ||
Series SIJ | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 0.0083Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 48nC | ||
Maximum Power Dissipation Pd 69.4W | ||
Maximum Operating Temperature 150°C | ||
Length 5.13mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.
TrenchFET power MOSFET
Fully lead (Pb)-free device
Very low RDS x Qg figure of merit
100 percent Rg and UIS tested
Related links
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