Infineon CoolMOSTMPFD7 MOSFET, 16 A, 650 V Enhancement, 3-Pin PG-TO-220 IPAN60R210PFD7SXKSA1
- RS Stock No.:
- 273-7460
- Mfr. Part No.:
- IPAN60R210PFD7SXKSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 50 units)*
MYR272.45
FREE delivery for orders over RM 500.00
In Stock
- 500 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Tube* |
|---|---|---|
| 50 - 50 | MYR5.449 | MYR272.45 |
| 100 + | MYR4.359 | MYR217.95 |
*price indicative
- RS Stock No.:
- 273-7460
- Mfr. Part No.:
- IPAN60R210PFD7SXKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 16A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolMOSTMPFD7 | |
| Package Type | PG-TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 210mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 25W | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 16A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolMOSTMPFD7 | ||
Package Type PG-TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 210mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 25W | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon MOSFET offers Cool MOS revolutionary technology for high voltage power MOSFETs. It is designed according to the super junction principle and pioneered by Infineon Technologies. The latest Cool MOS PFD7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, motor drive, lighting, etc. The new series provides all the benefits of a fast switching Super junction MOSFET, combined with an excellent price to performance ratio and state of the art ease of use level. The technology meets highest efficiency standards and supports high power density, enabling customers going towards very slim designs.
Fast body diode
Extremely low losses
Low switching losses Eoss
Excellent thermal behaviour
Excellent commutation ruggedness
Related links
- Infineon CoolMOSTMPFD7 MOSFET 650 V Enhancement, 3-Pin PG-TO-220
- Vishay SF Series N channel-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO-220 FullPAK SIHF110N65SF-GE3
- Infineon CoolMOSTM P7 MOSFET 600 V Enhancement, 3-Pin PG-TO-220
- Infineon OptiMOS 3 Type N-Channel MOSFET 250 V Enhancement, 3-Pin PG-TO-220
- Infineon CoolMOSTM P7 MOSFET 600 V Enhancement, 3-Pin PG-TO-220 IPAN60R180P7SXKSA1
- Infineon OptiMOS 3 Type N-Channel MOSFET 250 V Enhancement, 3-Pin PG-TO-220 IPA600N25NM3SXKSA1
- Infineon CoolMOS CP Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
