Infineon BSL606SN Type N-Channel MOSFET, 4.5 A, 60 V Enhancement, 6-Pin PG-TSOP-6
- RS Stock No.:
- 273-2854
- Mfr. Part No.:
- BSL606SNH6327XTSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
MYR17.67
FREE delivery for orders over RM 500.00
In Stock
- Plus 2,920 unit(s) shipping from 16 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 40 | MYR1.767 | MYR17.67 |
| 50 - 90 | MYR1.734 | MYR17.34 |
| 100 - 240 | MYR1.359 | MYR13.59 |
| 250 - 990 | MYR1.333 | MYR13.33 |
| 1000 + | MYR0.895 | MYR8.95 |
*price indicative
- RS Stock No.:
- 273-2854
- Mfr. Part No.:
- BSL606SNH6327XTSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 4.5A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PG-TSOP-6 | |
| Series | BSL606SN | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2W | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 3.7nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | AEC-Q101 | |
| Length | 40mm | |
| Width | 40 mm | |
| Height | 1.5mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 4.5A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PG-TSOP-6 | ||
Series BSL606SN | ||
Mount Type Surface | ||
Pin Count 6 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2W | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 3.7nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals AEC-Q101 | ||
Length 40mm | ||
Width 40 mm | ||
Height 1.5mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon N-channel small signal MOSFET 60 V in TSOP-6 package is ideally suited for a wide variety of applications including LED lighting, ADAS, body control units, SMPS and motor control.
Pb free lead plating
RoHS compliant and halogen free
Related links
- Infineon BSL606SN Type N-Channel MOSFET 60 V Enhancement, 6-Pin PG-TSOP-6 BSL606SNH6327XTSA1
- Infineon Surface Hall Effect Sensor 2.7 V 26 V 6-Pin
- Infineon Type N-Channel MOSFET 20 V Enhancement, 6-Pin TSOP-6
- Infineon Type N-Channel MOSFET 20 V Enhancement, 6-Pin TSOP-6 BSL202SNH6327XTSA1
- Infineon Isolated OptiMOS™ 2 Type N 1.5 A 6-Pin TSOP-6 BSL316CH6327XTSA1
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 6-Pin TSOP
- Infineon Isolated OptiMOS 2 Type P 1.5 A 6-Pin TSOP
- Infineon Isolated OptiMOS 2 Type P 1.5 A 6-Pin TSOP BSL215CH6327XTSA1
