Infineon HEXFET Type N-Channel MOSFET, 72 A, 200 V Enhancement, 3-Pin TO-262 IRFSL4127PBF
- RS Stock No.:
- 262-6772
- Mfr. Part No.:
- IRFSL4127PBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 2 units)*
MYR38.12
FREE delivery for orders over RM 500.00
Temporarily out of stock
- 1,000 unit(s) shipping from 05 February 2026
- Plus 1,000 unit(s) shipping from 12 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 48 | MYR19.06 | MYR38.12 |
| 50 - 98 | MYR14.83 | MYR29.66 |
| 100 - 248 | MYR13.335 | MYR26.67 |
| 250 - 498 | MYR13.07 | MYR26.14 |
| 500 + | MYR12.14 | MYR24.28 |
*price indicative
- RS Stock No.:
- 262-6772
- Mfr. Part No.:
- IRFSL4127PBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 72A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | HEXFET | |
| Package Type | TO-262 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.075Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 72A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series HEXFET | ||
Package Type TO-262 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.075Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon power MOSFET provides benefits such as improved gate, avalanche and dynamic dV/dt ruggedness and fully characterized capacitance and avalanche SOA.
Enhanced body diode dV/dt and dI/dt capability
Related links
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-262
- Infineon HEXFET Type N-Channel MOSFET 200 V TO-262
- Infineon HEXFET Type N-Channel MOSFET 200 V TO-262 IRFS4127TRLPBF
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220 IRFI4110GPBF
- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-262
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-262
- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-262 IRFSL7437PBF