Infineon HEXFET Type P-Channel MOSFET, -42 A, -55 V TO-263 AUIRF4905STRL
- RS Stock No.:
- 260-5059
- Mfr. Part No.:
- AUIRF4905STRL
- Manufacturer:
- Infineon
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Units | Per Unit | Saving |
|---|---|---|
| 1 - 24 | MYR31.26 | - |
| 25 - 49 | MYR28.07 | 10% |
| 50 - 99 | MYR27.51 | 11% |
| 100 - 249 | MYR23.00 | 26% |
| 250 + | MYR22.54 | 27% |
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- RS Stock No.:
- 260-5059
- Mfr. Part No.:
- AUIRF4905STRL
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -42A | |
| Maximum Drain Source Voltage Vds | -55V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 20mΩ | |
| Maximum Power Dissipation Pd | 170W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 53nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.3V | |
| Maximum Operating Temperature | 150°C | |
| Height | 15.88mm | |
| Width | 4.83mm | |
| Length | 10.67mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -42A | ||
Maximum Drain Source Voltage Vds -55V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 20mΩ | ||
Maximum Power Dissipation Pd 170W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 53nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.3V | ||
Maximum Operating Temperature 150°C | ||
Height 15.88mm | ||
Width 4.83mm | ||
Length 10.67mm | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon P Channel HEXFET Power MOSFET is specifically design for automotive applications. This power MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area.
Advanced process technology
Ultra low on resistance
Fast switching
Repetitive avalanche allowed up to Tjmax
Related links
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