MOSFET, 2000 V AG-EASY3B Infineon DF419MR20W3M1HFB11BPSA1

The Infineon MOSFET features a 4-leg boost configuration in one Easy 3B housing and comes with the latest CoolSiC M1H generation. The 2000 V SiC MOSFET shares the same performance and benefits as the 1200 V M1H series incl. 12% lower RDS(on) at 125° C, wider gate source voltage area for higher flexibility, a maximum junction temperature of 175° C and smaller chip sizes.

High current density
Low inductive design
Rugged mounting due to integrated mounting clamps

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