Infineon Type N-Channel MOSFET, 1200 V N TO-247 IMZ120R060M1HXKSA1
- RS Stock No.:
- 258-3764
- Mfr. Part No.:
- IMZ120R060M1HXKSA1
- Manufacturer:
- Infineon
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Subtotal (1 unit)*
MYR40.96
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- 85 unit(s) ready to ship from another location
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Units | Per Unit |
|---|---|
| 1 - 1 | MYR40.96 |
| 2 - 4 | MYR37.67 |
| 5 - 9 | MYR31.80 |
| 10 - 14 | MYR31.77 |
| 15 + | MYR28.43 |
*price indicative
- RS Stock No.:
- 258-3764
- Mfr. Part No.:
- IMZ120R060M1HXKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-247 | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 9.8mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 5.2V | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-247 | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 9.8mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 5.2V | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon CoolSiC 1200 V, 60 mΩ SiC MOSFET in TO247-4 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages. These include, the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristic. CoolSiC MOSFETs are ideal for hard- and resonant-switching topologies like power factor correction circuits, bi-directional topologies and DC-DC converters or DC-AC inverters.
Wide gate-source voltage range
Robust and low loss body diode rated for hard commutation
Temperature independent turn-off switching losses
Highest efficiency
Reduced cooling effort
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