Infineon IPD Type N-Channel MOSFET, 90 A, 60 V Enhancement, 3-Pin TO-252

This image is representative of the product range

Bulk discount available

Subtotal (1 reel of 2500 units)*

MYR8,977.50

Add to Basket
Select or type quantity
In Stock
  • 5,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
Per Reel*
2500 - 2500MYR3.591MYR8,977.50
5000 - 5000MYR3.483MYR8,707.50
7500 +MYR3.344MYR8,360.00

*price indicative

RS Stock No.:
249-6912
Mfr. Part No.:
IPD90N06S405ATMA2
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

90A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-252

Series

IPD

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.7mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

80nC

Maximum Power Dissipation Pd

81W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon OptiMOS is power MOSFET for automotive applications. Operating channel is N. It is AEC Q101 qualified. MSL1 up to 260°C peak reflow. Green Product (RoHS compliant) and it is 100% Avalanche tested.

175°C operating temperature

Related links