Infineon IPD Type N-Channel MOSFET, 180 A, 100 V N, 3-Pin TO-252 IPD50N10S3L16ATMA1

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Subtotal (1 pack of 2 units)*

MYR19.90

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Units
Per Unit
Per Pack*
2 - 8MYR9.95MYR19.90
10 - 98MYR9.47MYR18.94
100 - 248MYR8.99MYR17.98
250 - 498MYR8.54MYR17.08
500 +MYR8.125MYR16.25

*price indicative

Packaging Options:
RS Stock No.:
244-0878
Mfr. Part No.:
IPD50N10S3L16ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-252

Series

IPD

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.7mΩ

Channel Mode

N

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

80nC

Maximum Power Dissipation Pd

81W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon MOSFET OptiMOSTM Power Transistor is a Green product RoHS compliant and is Automotive AEC Q101 qualified.

N-channel - Enhancement mode

MSL1 up to 260°C peak reflow

175°C operating temperature

100% Avalanche tested

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