Nexperia Type N-Channel MOSFET, 10.3 A, 30 V, 4-Pin LFPAK56E PSMN1R5-50YLHX

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Subtotal (1 pack of 2 units)*

MYR32.32

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  • 1,480 unit(s) ready to ship from another location
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Units
Per Unit
Per Pack*
2 - 48MYR16.16MYR32.32
50 - 98MYR15.675MYR31.35
100 - 248MYR15.05MYR30.10
250 - 498MYR14.30MYR28.60
500 +MYR13.44MYR26.88

*price indicative

Packaging Options:
RS Stock No.:
240-1973
Mfr. Part No.:
PSMN1R5-50YLHX
Manufacturer:
Nexperia
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Brand

Nexperia

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

10.3A

Maximum Drain Source Voltage Vds

30V

Package Type

LFPAK56E

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

13.6mΩ

Maximum Power Dissipation Pd

12.5W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Nexperia MOSFET is in LFPAK56E package with 200 Amp continuous current, logic level gate drive and N-channel enhancement mode. The ASFET is particularly suited to 36 V battery powered applications requiring strong avalanche capability, linear mode per

LFPAK56E low-stress exposed lead-frame for ultimate reliability, optimum soldering and easy solder-joint inspection

Copper-clip and solder die attach for low package inductance and resistance, and high ID (max) rating

Qualified to 175 °C

Avalanche rated, 100% tested

Low QG, QGD and QOSS for high efficiency, especially at higher switching frequencies

Superfast switching with soft body-diode recovery for low-spiking and ringing, recommended for low EMI designs

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