Infineon CoolSiC Type N-Channel MOSFET, 33 A, 1200 V Enhancement, 3-Pin TO-247 AIMW120R080M1XKSA1

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MYR64.68

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1 - 9MYR64.68
10 - 49MYR63.39
50 - 99MYR62.10
100 - 149MYR60.85
150 +MYR59.66

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Packaging Options:
RS Stock No.:
233-3491
Mfr. Part No.:
AIMW120R080M1XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

33A

Maximum Drain Source Voltage Vds

1200V

Package Type

TO-247

Series

CoolSiC

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

80mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

28nC

Forward Voltage Vf

5.2V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

150W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Height

5.3mm

Width

21.5 mm

Standards/Approvals

No

Length

16.3mm

Automotive Standard

AEC-Q101

The Infineon CoolSiC MOSFETs for Automotive family has been developed for current and future on board charger and DC-DC applications in hybrid and electric vehicles. It has 33 A drain current.

Efficiency improvement

Enabling higher frequency

Increased power density

Cooling effort reduction

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