STMicroelectronics STB37N60 Type N-Channel MOSFET, 12 A, 1200 V Enhancement, 3-Pin H2PAK STH12N120K5-2
- RS Stock No.:
- 233-3041
- Mfr. Part No.:
- STH12N120K5-2
- Manufacturer:
- STMicroelectronics
This image is representative of the product range
Bulk discount available
Subtotal (1 unit)*
MYR56.13
FREE delivery for orders over RM 500.00
In Stock
- 1,903 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit |
|---|---|
| 1 - 9 | MYR56.13 |
| 10 - 99 | MYR53.35 |
| 100 - 249 | MYR50.63 |
| 250 - 499 | MYR48.14 |
| 500 + | MYR45.72 |
*price indicative
- RS Stock No.:
- 233-3041
- Mfr. Part No.:
- STH12N120K5-2
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | H2PAK | |
| Series | STB37N60 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 690mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 44.2nC | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 1.5V | |
| Maximum Power Dissipation Pd | 250W | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.4mm | |
| Height | 4.8mm | |
| Width | 15.8 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type H2PAK | ||
Series STB37N60 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 690mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 44.2nC | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 1.5V | ||
Maximum Power Dissipation Pd 250W | ||
Maximum Operating Temperature 150°C | ||
Length 10.4mm | ||
Height 4.8mm | ||
Width 15.8 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The STMicroelectronics very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Worldwide best FOM (figure of merit)
Ultra-low gate charge
100% avalanche tested
Zener-protected
Related links
- STMicroelectronics STB37N60 Type N-Channel MOSFET 1200 V Enhancement, 3-Pin H2PAK
- STMicroelectronics STB37N60 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263
- STMicroelectronics STB37N60 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263 STB37N60DM2AG
- STMicroelectronics SiC MOSFET Type N-Channel MOSFET 1200 V Enhancement, 3-Pin H2PAK-2
- STMicroelectronics SiC MOSFET Type N-Channel MOSFET 1200 V Enhancement, 3-Pin H2PAK-2 SCT20N120H
- STMicroelectronics MDmesh K5 Type N-Channel MOSFET 1200 V Enhancement, 3-Pin H2PAK-2 STH2N120K5-2AG
- STMicroelectronics MDmesh K5 Type N-Channel MOSFET 1200 V Enhancement, 3-Pin H2PAK-2 STH13N120K5-2AG
- STMicroelectronics Type N-Channel MOSFET 100 V Enhancement, 3-Pin H2PAK