STMicroelectronics SCTWA35N65G2V-4 Type N-Channel MOSFET, 45 A, 650 V Enhancement, 4-Pin Hip-247
- RS Stock No.:
- 233-0472
- Mfr. Part No.:
- SCTWA35N65G2V-4
- Manufacturer:
- STMicroelectronics
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Bulk discount available
Subtotal (1 tube of 30 units)*
MYR2,354.04
FREE delivery for orders over RM 500.00
In Stock
- Plus 240 unit(s) shipping from 05 January 2026
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Units | Per Unit | Per Tube* |
|---|---|---|
| 30 - 30 | MYR78.468 | MYR2,354.04 |
| 60 - 60 | MYR74.544 | MYR2,236.32 |
| 90 + | MYR70.817 | MYR2,124.51 |
*price indicative
- RS Stock No.:
- 233-0472
- Mfr. Part No.:
- SCTWA35N65G2V-4
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 45A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | Hip-247 | |
| Series | SCTWA35N65G2V-4 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 67mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 73nC | |
| Forward Voltage Vf | 3.3V | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Power Dissipation Pd | 240W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 200°C | |
| Standards/Approvals | No | |
| Length | 20.1mm | |
| Width | 21.1 mm | |
| Height | 5.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 45A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type Hip-247 | ||
Series SCTWA35N65G2V-4 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 67mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 73nC | ||
Forward Voltage Vf 3.3V | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Power Dissipation Pd 240W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 200°C | ||
Standards/Approvals No | ||
Length 20.1mm | ||
Width 21.1 mm | ||
Height 5.1mm | ||
Automotive Standard No | ||
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Very fast and robust intrinsic body diode
Low capacitances
Source sensing pin for increased efficiency
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