onsemi Isolated Type N-Channel SiC Power Module, 304 A, 1200 V, 36-Pin F2 NXH006P120MNF2PTG

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Subtotal (1 unit)*

MYR1,118.39

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Units
Per Unit
1 - 9MYR1,118.39
10 - 19MYR1,102.63
20 - 29MYR1,091.88
30 - 39MYR1,086.51
40 +MYR1,075.75

*price indicative

Packaging Options:
RS Stock No.:
229-6510
Mfr. Part No.:
NXH006P120MNF2PTG
Manufacturer:
onsemi
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Brand

onsemi

Product Type

SiC Power Module

Channel Type

Type N

Maximum Continuous Drain Current Id

304A

Maximum Drain Source Voltage Vds

1200V

Package Type

F2

Mount Type

Chassis

Pin Count

36

Forward Voltage Vf

6V

Minimum Operating Temperature

-40°C

Maximum Gate Source Voltage Vgs

25 V

Maximum Power Dissipation Pd

950W

Typical Gate Charge Qg @ Vgs

847nC

Maximum Operating Temperature

175°C

Transistor Configuration

Isolated

Height

17mm

Standards/Approvals

Halide Free, Pb-Free, RoHS

Width

57 mm

Length

63.3mm

Automotive Standard

No

The ON Semiconductor power module containing an 1200 V SiC MOSFET half−bridge and a thermistor in an F2 package. It is typically used in solar inverter, UPS, electrical vehicle charging stations and industrial power.

Options with pre−applied thermal interface material

Options with solderable pins and press−fit pins

Pb−free

RoHS compliant

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