Infineon IPP082N10NF2S Type N-Channel MOSFET, 15 A, 100 V, 3-Pin TO-220 IPP082N10NF2SAKMA1
- RS Stock No.:
- 228-6553
- Mfr. Part No.:
- IPP082N10NF2SAKMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
MYR34.45
FREE delivery for orders over RM 500.00
In Stock
- 910 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 10 | MYR3.445 | MYR34.45 |
| 20 - 90 | MYR3.342 | MYR33.42 |
| 100 - 240 | MYR3.242 | MYR32.42 |
| 250 - 490 | MYR3.145 | MYR31.45 |
| 500 + | MYR3.051 | MYR30.51 |
*price indicative
- RS Stock No.:
- 228-6553
- Mfr. Part No.:
- IPP082N10NF2SAKMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 15A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | IPP082N10NF2S | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8.2mΩ | |
| Maximum Power Dissipation Pd | 100W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.36mm | |
| Standards/Approvals | No | |
| Width | 4.57 mm | |
| Height | 9.45mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 15A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series IPP082N10NF2S | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8.2mΩ | ||
Maximum Power Dissipation Pd 100W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 10.36mm | ||
Standards/Approvals No | ||
Width 4.57 mm | ||
Height 9.45mm | ||
Automotive Standard No | ||
The Infineon IPP082N10NF2S is the N channel power MOSFET. The drain source voltage of this mosfet is the 100 V. It supports a wide variety of applications and standard pinout allows for drop-in replacement. This mosfet have increased current carrying capability.
Optimized for a wide range of applications
N-channel, normal level
100% avalanche tested
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