Vishay E Type N-Channel Power MOSFET, 4.4 A, 850 V Enhancement, 3-Pin TO-252 SiHD5N80AE-GE3
- RS Stock No.:
- 228-2852
- Mfr. Part No.:
- SiHD5N80AE-GE3
- Manufacturer:
- Vishay
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MYR43.34
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Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 40 | MYR4.334 | MYR43.34 |
| 50 - 90 | MYR4.012 | MYR40.12 |
| 100 - 240 | MYR3.713 | MYR37.13 |
| 250 - 990 | MYR3.437 | MYR34.37 |
| 1000 + | MYR3.182 | MYR31.82 |
*price indicative
- RS Stock No.:
- 228-2852
- Mfr. Part No.:
- SiHD5N80AE-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 4.4A | |
| Maximum Drain Source Voltage Vds | 850V | |
| Series | E | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.35Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 62.5W | |
| Typical Gate Charge Qg @ Vgs | 11nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 4.4A | ||
Maximum Drain Source Voltage Vds 850V | ||
Series E | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.35Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 62.5W | ||
Typical Gate Charge Qg @ Vgs 11nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 850V Maximum Drain Source Voltage, 4.4A Maximum Continuous Drain Current - SiHD5N80AE-GE3
This power MOSFET is a high-voltage N-channel transistor designed for switching and amplification in surface-mounted power electronics. It operates across a wide temperature range and is intended for applications requiring robust blocking capability and moderate continuous current handling while occupying a TO-252 surface-mount footprint.
Features and Benefits:
• 850V drain-source rating enabling high-voltage switching
• 1.35Ω Rds(on) supports controlled conduction losses
• 4.4A continuous drain current for steady load operation
• 62.5W maximum dissipation for thermal performance headroom
• 11nC typical gate charge for faster switching transitions
• 30V gate-source limit allowing standard gate-drive ranges
• 1.35Ω Rds(on) supports controlled conduction losses
• 4.4A continuous drain current for steady load operation
• 62.5W maximum dissipation for thermal performance headroom
• 11nC typical gate charge for faster switching transitions
• 30V gate-source limit allowing standard gate-drive ranges
Applications
• Suitable for high-voltage power supplies and converters
• Ideal for industrial motor-drive front-ends
• Used for switch-mode power regulation stages
• Can be used for telecom and utility line-interface circuits
• Appropriate for compact surface-mount power modules
• Ideal for industrial motor-drive front-ends
• Used for switch-mode power regulation stages
• Can be used for telecom and utility line-interface circuits
• Appropriate for compact surface-mount power modules
What operating temperature range can I expect for reliable operation?
The device functions from -55°C up to 150°C, permitting use in demanding thermal environments.
How should I consider gate-drive design with this component?
Design for a maximum Vgs of 30V and account for the typical 11nC gate charge when sizing drivers to meet switching speed and drive-current requirements.
What packaging and mounting considerations apply for assembly?
It is supplied in a TO-252 package intended for surface mounting, so land pattern and thermal vias should be planned to manage power dissipation.
Is this suitable for automotive-certified designs?
It is not specified to meet automotive standards, so it should be evaluated against any vehicle-specific requirements before use.
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