Vishay E Type N-Channel MOSFET, 4.4 A, 800 V, 3-Pin TO-263 SIHB5N80AE-GE3

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Subtotal (1 pack of 10 units)*

MYR52.16

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Per Pack*
10 - 10MYR5.216MYR52.16
20 - 20MYR5.11MYR51.10
30 - 40MYR4.737MYR47.37
50 +MYR4.345MYR43.45

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Packaging Options:
RS Stock No.:
225-9912
Mfr. Part No.:
SIHB5N80AE-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

4.4A

Maximum Drain Source Voltage Vds

800V

Series

E

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.3Ω

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

62.5W

Maximum Gate Source Voltage Vgs

30 V

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

16.5nC

Maximum Operating Temperature

150°C

Height

15.88mm

Length

10.67mm

Standards/Approvals

No

Width

9.65 mm

Automotive Standard

No

The Vishay Siliconix maintains Reliability data for Semiconductor Technology and Package Reliability represent a composite of all qualified locations.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Ciss)

Reduced switching and conduction losses

Ultra low gate charge (Qg)

Avalanche energy rated (UIS)

Integrated Zener diode ESD protection

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