Infineon IPL60R Type N-Channel MOSFET, 17 A, 600 V Enhancement, 5-Pin ThinPAK IPL60R125C7AUMA1
- RS Stock No.:
- 222-4914
- Mfr. Part No.:
- IPL60R125C7AUMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 2 units)*
MYR28.03
FREE delivery for orders over RM 500.00
In Stock
- Plus 480 unit(s) shipping from 05 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 8 | MYR14.015 | MYR28.03 |
| 10 - 98 | MYR12.83 | MYR25.66 |
| 100 - 248 | MYR11.875 | MYR23.75 |
| 250 - 498 | MYR11.01 | MYR22.02 |
| 500 + | MYR10.725 | MYR21.45 |
*price indicative
- RS Stock No.:
- 222-4914
- Mfr. Part No.:
- IPL60R125C7AUMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 17A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | ThinPAK | |
| Series | IPL60R | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 120mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 34nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 103W | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 8.1mm | |
| Height | 1.1mm | |
| Width | 8.1 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 17A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type ThinPAK | ||
Series IPL60R | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 120mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 34nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 103W | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 8.1mm | ||
Height 1.1mm | ||
Width 8.1 mm | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ∼50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs.
Reduced switching loss parameters such as Q G, C oss, E oss
Best-in-class figure of merit Q G*R DS(on)
Increased switching frequency
Best R (on)*A in the world
Rugged body diode
Related links
- Infineon IPL60R Type N-Channel MOSFET 600 V Enhancement, 5-Pin ThinPAK
- Infineon IPL60R Type N-Channel MOSFET 600 V Enhancement, 5-Pin ThinPAK
- Infineon IPL60R Type N-Channel MOSFET 600 V Enhancement, 5-Pin ThinPAK
- Infineon IPL60R Type N-Channel MOSFET 600 V Enhancement, 5-Pin ThinPAK IPL60R185P7AUMA1
- Infineon IPL60R Type N-Channel MOSFET 600 V Enhancement, 5-Pin ThinPAK IPL60R075CFD7AUMA1
- Infineon IPL60R Type N-Channel MOSFET 650 V Enhancement, 5-Pin ThinPAK
- Infineon IPL60R Type N-Channel MOSFET 650 V Enhancement, 5-Pin ThinPAK
- Infineon IPL60R Type N-Channel MOSFET 650 V Enhancement, 5-Pin ThinPAK IPL65R070C7AUMA1