Infineon IMBF1 Type N-Channel MOSFET, 7.4 A, 1700 V Enhancement, 7-Pin TO-263 IMBF170R650M1XTMA1

This image is representative of the product range

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 2 units)*

MYR52.14

Add to Basket
Select or type quantity
In Stock
  • 1,730 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
Per Pack*
2 - 8MYR26.07MYR52.14
10 - 98MYR23.90MYR47.80
100 - 248MYR22.05MYR44.10
250 - 498MYR20.49MYR40.98
500 +MYR19.92MYR39.84

*price indicative

Packaging Options:
RS Stock No.:
222-4851
Mfr. Part No.:
IMBF170R650M1XTMA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

7.4A

Maximum Drain Source Voltage Vds

1700V

Package Type

TO-263

Series

IMBF1

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

650mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon CoolSiC™ 1700 V, 650 mΩ SiC MOSFET in a TO-263-7 high creepage package is optimized for fly-back topologies to be used in auxiliary power supplies connected to DC-link voltages 600 V up to 1000 V in numerous power applications.

Optimized for fly-back topologies

Extremely low switching loss

12 V / 0 V gate-source voltage compatible with fly-back controllers

Fully controllable dV/dt for EMI optimization

SMD package with enhanced creepage and clearance distances, > 7 mm

Related links