Infineon CoolMOS Type N-Channel MOSFET, 1.5 A, 800 V Enhancement, 3-Pin TO-251 IPU80R4K5P7AKMA1
- RS Stock No.:
- 222-4717
- Mfr. Part No.:
- IPU80R4K5P7AKMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 20 units)*
MYR41.42
FREE delivery for orders over RM 500.00
In Stock
- 60 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 20 - 20 | MYR2.071 | MYR41.42 |
| 40 - 80 | MYR1.90 | MYR38.00 |
| 100 - 220 | MYR1.754 | MYR35.08 |
| 240 - 480 | MYR1.627 | MYR32.54 |
| 500 + | MYR1.582 | MYR31.64 |
*price indicative
- RS Stock No.:
- 222-4717
- Mfr. Part No.:
- IPU80R4K5P7AKMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 1.5A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-251 | |
| Series | CoolMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.5Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 4nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 13W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.73mm | |
| Width | 6.22 mm | |
| Height | 2.41mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 1.5A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-251 | ||
Series CoolMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.5Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 4nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 13W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Length 6.73mm | ||
Width 6.22 mm | ||
Height 2.41mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon design of Cool MOS™ P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon’s over 18 years pioneering super junction technology innovation.
Pb-free lead plating; RoHS compliant
Superior thermal resistance 100% avalanche tested
Halogen-free according to IEC61249-2-23
Related links
- Infineon CoolMOS Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-251
- Infineon CoolMOS P7 Type N-Channel MOSFET 800 V Enhancement, 3-Pin SOT-223
- Infineon CoolMOS P7 Type N-Channel MOSFET 800 V Enhancement, 3-Pin SOT-223 IPN80R4K5P7ATMA1
- Infineon CoolMOS P7 Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-251
- Infineon CoolMOS P7 Type N-Channel MOSFET & Diode 800 V Enhancement, 3-Pin TO-251
- Infineon CoolMOS P7 Type N-Channel MOSFET & Diode 800 V Enhancement, 3-Pin TO-251 IPS80R750P7AKMA1
- Infineon CoolMOS P7 Type N-Channel MOSFET & Diode 800 V Enhancement, 3-Pin TO-251 IPU80R750P7AKMA1
- Infineon CoolMOS P7 Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-251 IPS80R900P7AKMA1