Infineon CoolMOS Type N-Channel MOSFET, 9 A, 650 V Enhancement, 3-Pin TO-220 IPA60R180C7XKSA1
- RS Stock No.:
- 222-4642
- Mfr. Part No.:
- IPA60R180C7XKSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
MYR63.51
FREE delivery for orders over RM 500.00
In Stock
- Plus 455 unit(s) shipping from 05 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 5 | MYR12.702 | MYR63.51 |
| 10 - 95 | MYR11.634 | MYR58.17 |
| 100 - 245 | MYR10.746 | MYR53.73 |
| 250 - 495 | MYR9.978 | MYR49.89 |
| 500 + | MYR9.702 | MYR48.51 |
*price indicative
- RS Stock No.:
- 222-4642
- Mfr. Part No.:
- IPA60R180C7XKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 9A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolMOS | |
| Package Type | TO-220 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 180mΩ | |
| Channel Mode | Enhancement | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 9A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolMOS | ||
Package Type TO-220 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 180mΩ | ||
Channel Mode Enhancement | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon design of Cool MOS™ C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. 600V Cool MOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The 600V C7 is the first technology ever with RDS(on)*A below 1Ohm*mm².
Capable of reverse conduction
Low gate charge, low output charge
Superior commutation ruggedness
Qualified for standard grade applications according to JEDEC standards
Related links
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- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
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