Infineon OptiMOS-T Type N-Channel MOSFET, 70 A, 120 V Enhancement, 3-Pin TO-252 IPD70N12S311ATMA1
- RS Stock No.:
- 214-4390
- Mfr. Part No.:
- IPD70N12S311ATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
MYR78.60
FREE delivery for orders over RM 500.00
In Stock
- 19,620 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 620 | MYR7.86 | MYR78.60 |
| 630 - 1240 | MYR7.207 | MYR72.07 |
| 1250 + | MYR6.657 | MYR66.57 |
*price indicative
- RS Stock No.:
- 214-4390
- Mfr. Part No.:
- IPD70N12S311ATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 70A | |
| Maximum Drain Source Voltage Vds | 120V | |
| Series | OptiMOS-T | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 11.1mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 125W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 51nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.65mm | |
| Standards/Approvals | No | |
| Height | 2.35mm | |
| Width | 6.42 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 70A | ||
Maximum Drain Source Voltage Vds 120V | ||
Series OptiMOS-T | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 11.1mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 125W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 51nC | ||
Maximum Operating Temperature 175°C | ||
Length 6.65mm | ||
Standards/Approvals No | ||
Height 2.35mm | ||
Width 6.42 mm | ||
Automotive Standard AEC-Q101 | ||
This Infineon OptiMOS MOSFET is suitable for automotive applications and it is 100% Avalanche tested.
It is Halogen-free according to IEC61249-2-21
Related links
- Infineon OptiMOS-T Type N-Channel MOSFET 120 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS-T Type N-Channel MOSFET 120 V Enhancement, 3-Pin TO-220 IPP70N12S311AKSA1
- Infineon OptiMOS-T Type N-Channel MOSFET 120 V Enhancement, 3-Pin TO-220
- Infineon OptiMOS-T Type N-Channel MOSFET 120 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS-T Type N-Channel MOSFET 120 V Enhancement, 3-Pin TO-252 IPD50N12S3L15ATMA1
- Infineon OptiMOS-T Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS-T Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS-T Type N-Channel MOSFET 120 V Enhancement, 3-Pin TO-263