Vishay E Type N-Channel MOSFET, 6 A, 800 V Enhancement, 3-Pin TO-220 SIHA15N80AE-GE3

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Subtotal (1 pack of 5 units)*

MYR56.62

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5 - 10MYR11.324MYR56.62
15 - 20MYR10.76MYR53.80
25 +MYR10.22MYR51.10

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Packaging Options:
RS Stock No.:
210-4959
Mfr. Part No.:
SIHA15N80AE-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

800V

Series

E

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

304mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

33W

Maximum Gate Source Voltage Vgs

30 V

Typical Gate Charge Qg @ Vgs

35nC

Maximum Operating Temperature

150°C

Width

9.7 mm

Length

28.1mm

Standards/Approvals

No

Height

4.3mm

Automotive Standard

No

The Vishay E Series Power MOSFET has Thin-Lead TO-220 FULLPAK package type with 6 A drain current.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

Reduced switching and conduction losses

Avalanche energy rated (UIS)

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