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Vishay TrenchFET Gen IV Type N-Channel MOSFET, 100 A, 40 V Enhancement, 8-Pin SO-8

RS Stock No.:: 200-6840
Mfr. Part No.:: SIDR638DP-T1-RE3
Manufacturer:: Vishay

Vishay TrenchFET Gen IV Type N-Channel MOSFET, 100 A, 40 V Enhancement, 8-Pin SO-8

This image is representative of the product range

Bulk discount available

Subtotal (1 pack of 25 units)*

MYR220.40

FREE delivery for orders over RM 500.00

Temporarily out of stock

Shipping from 14 September 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per Unit	Per Pack*
25 - 725	MYR8.816	MYR220.40
750 - 1475	MYR8.256	MYR206.40
1500 +	MYR7.549	MYR188.73

*price indicative

RS Stock No.:: 200-6840
Mfr. Part No.:: SIDR638DP-T1-RE3
Manufacturer:: Vishay

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	100A
	Maximum Drain Source Voltage Vds	40V
	Series	TrenchFET Gen IV
	Package Type	SO-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	1.16mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	204nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	125W
	Forward Voltage Vf	1.1V
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	175°C
	Length	6.15mm
	Standards/Approvals	No
	Width	5.15 mm
	Height	0.61mm
	Automotive Standard	No

	Select all
	Brand Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 100A
	Maximum Drain Source Voltage Vds 40V
	Series TrenchFET Gen IV
	Package Type SO-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 1.16mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 204nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 125W
	Forward Voltage Vf 1.1V
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 175°C
	Length 6.15mm
	Standards/Approvals No
	Width 5.15 mm
	Height 0.61mm
	Automotive Standard No

Document- SIDR638DP-T1-RE3

The Vishay SIDR638DP-T1-RE3 is a N-channel 40V (D-S) MOSFET.

TrenchFET Gen IV power MOSFET

Very low RDS - Qg figure-of-merit (FOM)

Tuned for the lowest RDS - Qoss FOM

Top side cooling feature provides additional venue for thermal transfer

100 % Rg and UIS tested

Vishay TrenchFET Gen IV Type N-Channel MOSFET, 100 A, 40 V Enhancement, 8-Pin SO-8

FREE delivery for orders over RM 500.00

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