onsemi NVMYS8D0N04C Type N-Channel MOSFET, 49 A, 40 V Enhancement, 4-Pin LFPAK NVMYS8D0N04CTWG

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Subtotal (1 pack of 30 units)*

MYR55.02

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30 - 720MYR1.834MYR55.02
750 - 1470MYR1.773MYR53.19
1500 +MYR1.714MYR51.42

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Packaging Options:
RS Stock No.:
195-2541
Mfr. Part No.:
NVMYS8D0N04CTWG
Manufacturer:
onsemi
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Brand

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

49A

Maximum Drain Source Voltage Vds

40V

Series

NVMYS8D0N04C

Package Type

LFPAK

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

8.1mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

38W

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

10nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Length

5mm

Standards/Approvals

No

Height

1.15mm

Width

4.25 mm

Automotive Standard

AEC-Q101

Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability

Small Footprint (5x6 mm) for Compact Design

Low RDS(on) to Minimize Conduction Losses

Low QG and Capacitance to Minimize Driver Losses

LFPAK4 Package, Industry Standard

PPAP Capable

These Devices are Pb−Free

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