N-Channel MOSFET, 80 A, 55 V, 3-Pin D2PAK STMicroelectronics STB80NF55-06T4
- RS Stock No.:
- 188-8284
- Mfr. Part No.:
- STB80NF55-06T4
- Manufacturer:
- STMicroelectronics
Bulk discount available
Subtotal (1 reel of 1000 units)**
MYR7,857.00
Stock check temporarily unavailable - call for stock availability
FREE delivery for orders over MYR700.00
Units | Per Unit | Per Reel** |
|---|---|---|
| 1000 - 1000 | MYR7.857 | MYR7,857.00 |
| 2000 - 3000 | MYR7.684 | MYR7,684.00 |
| 4000 + | MYR7.542 | MYR7,542.00 |
**price indicative
- RS Stock No.:
- 188-8284
- Mfr. Part No.:
- STB80NF55-06T4
- Manufacturer:
- STMicroelectronics
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 80 A | |
| Maximum Drain Source Voltage | 55 V | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 6.5 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 300 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Maximum Operating Temperature | +175 °C | |
| Length | 10.4mm | |
| Width | 9.35mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 142 nC @ 10 V | |
| Height | 4.37mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.5V | |
Select all | ||
|---|---|---|
Manufacturer STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 80 A | ||
Maximum Drain Source Voltage 55 V | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 6.5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 300 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Maximum Operating Temperature +175 °C | ||
Length 10.4mm | ||
Width 9.35mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 142 nC @ 10 V | ||
Height 4.37mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.5V | ||
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