N-Channel MOSFET, 120 A, 40 V, 3-Pin D2PAK Vishay SQM40041EL_GE3
- RS Stock No.:
- 188-5006
- Mfr. Part No.:
- SQM40041EL_GE3
- Manufacturer:
- Vishay
Bulk discount available
Subtotal (1 pack of 5 units)**
MYR65.08
665 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over MYR700.00
Units | Per Unit | Per Pack** |
|---|---|---|
| 5 - 195 | MYR13.016 | MYR65.08 |
| 200 - 395 | MYR11.49 | MYR57.45 |
| 400 + | MYR10.688 | MYR53.44 |
**price indicative
- RS Stock No.:
- 188-5006
- Mfr. Part No.:
- SQM40041EL_GE3
- Manufacturer:
- Vishay
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 120 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 4.8 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Minimum Gate Threshold Voltage | 1.5V | |
| Maximum Power Dissipation | 157 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Length | 10.41mm | |
| Typical Gate Charge @ Vgs | 288 nC @ 10 V | |
| Maximum Operating Temperature | +175 °C | |
| Number of Elements per Chip | 1 | |
| Width | 9.65mm | |
| Height | 4.57mm | |
| Automotive Standard | AEC-Q101 | |
| Forward Diode Voltage | 1.5V | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Manufacturer Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 120 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 4.8 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1.5V | ||
Maximum Power Dissipation 157 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Length 10.41mm | ||
Typical Gate Charge @ Vgs 288 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Width 9.65mm | ||
Height 4.57mm | ||
Automotive Standard AEC-Q101 | ||
Forward Diode Voltage 1.5V | ||
Minimum Operating Temperature -55 °C | ||
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